The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 01, 2016
Filed:
Jan. 30, 2013
Applicant:
Sony Corporation, Tokyo, JP;
Inventors:
Hiroki Tsunemi, Kagoshima, JP;
Hideo Yamagata, Kagoshima, JP;
Kenji Nagai, Kagoshima, JP;
Yuji Ibusuki, Kagoshima, JP;
Assignee:
SONY CORPORATION, Tokyo, JP;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/78 (2006.01); H01L 27/13 (2006.01); H01L 49/02 (2006.01); H01L 23/48 (2006.01); H01L 23/522 (2006.01); H01L 27/12 (2006.01); H01L 21/768 (2006.01); H01L 23/00 (2006.01); H01L 21/84 (2006.01);
U.S. Cl.
CPC ...
H01L 29/78 (2013.01); H01L 21/768 (2013.01); H01L 21/76898 (2013.01); H01L 21/84 (2013.01); H01L 23/481 (2013.01); H01L 23/522 (2013.01); H01L 23/5223 (2013.01); H01L 23/5227 (2013.01); H01L 23/5228 (2013.01); H01L 24/11 (2013.01); H01L 27/12 (2013.01); H01L 27/13 (2013.01); H01L 28/10 (2013.01); H01L 28/24 (2013.01); H01L 28/40 (2013.01); H01L 2924/07802 (2013.01); H01L 2924/1305 (2013.01); H01L 2924/1306 (2013.01); H01L 2924/13091 (2013.01); H01L 2924/15788 (2013.01);
Abstract
A high-frequency semiconductor device, wherein on one surface of a semiconductor substrate, a first insulating layer, an undoped epitaxial polysilicon layer in a state of column crystal, a second insulating layer, and a semiconductor layer are formed in order from a side of the one surface, and a high-frequency transistor is formed in a location of the semiconductor layer facing the undoped epitaxial polysilicon layer with the second insulating layer in between.