The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 01, 2016
Filed:
Jul. 22, 2013
Lg Electronics Inc., Seoul, KR;
Seongmoo Cho, Seoul, KR;
Taehoon Jang, Seoul, KR;
LG Electronics Inc., Seoul, KR;
Abstract
This specification is directed to a semiconductor device capable of reducing a leakage current by forming a first GaN layer including a plurality of GaN layers and FeNlayers interposed between the plurality of GaN layers, in a semiconductor device having the first GaN layer, an AlGaN layer, a second GaN layer, a gate electrode, a source electrode and a drain electrode which are deposited in a sequential manner, and a fabricating method thereof. To this end, a semiconductor device according to one exemplary embodiment includes a first GaN layer, an AlGaN layer on the first GaN layer, a second GaN layer on the AlGaN layer, and a source electrode, a drain electrode and a gate electrode formed on a portion of the second GaN layer, wherein the first GaN layer comprises a plurality of GaN layers and FeNlayers interposed between the plurality of GaN layers.