The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 01, 2016
Filed:
Apr. 16, 2014
Imec, Leuven, BE;
Stefaan Decoutere, Leuven, BE;
Silvia Lenci, Linden, BE;
IMEC, Leuven, BE;
Abstract
A semiconductor device includes a Schottky diode and a High Electron Mobility Transistor (HEMT) formed on a III-nitride stack. The III-nitride stack includes at least a lower and an upper III-nitride layer forming a heterojunction therebetween, so that a 2-dimensional electron gas (2DEG) layer may be formed in the lower layer. The 2DEG layer serves as a charge carrier for the diode and the HEMT. A doped III-nitride layer may be present between a portion of the anode of the diode and the III-nitride stack, and the portion may be located between the diode's Schottky junction and the cathode. A further layer of doped III-nitride material may be present between the gate electrode of the HEMT and the III-nitride stack. The thickness of the III-nitride layers is not equal, so that the turn-on voltage of the diode and the threshold voltage of the HEMT may be tuned according to specific requirements. The disclosure also involves a method of producing such a semiconductor device.