The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 01, 2016
Filed:
Nov. 26, 2013
Global Power Device Company, Lake Forest, CA (US);
Utpal K. Chakrabarti, Allentown, PA (US);
Global Power Technologies Group, Inc., Lake Forest, CA (US);
Abstract
Methods, systems, and devices are disclosed for implementing high power circuits and semiconductor devices. In one aspect, a method for fabricating a silicon carbide (SiC) device includes forming a thin layer of a protection material over a SiC substrate, in which the protection material has a lattice constant that substantially matches a lattice constant of SiC and the thin layer has a thickness of less than a critical layer thickness for the protection material over SiC to form a uniform interface between the protection material and SiC, forming a layer of an insulator material over the thin layer of the protection material, and forming one or more transistor structures over the insulator material.