The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 01, 2016
Filed:
Jan. 16, 2015
Board of Regents of the University of Nebraska, Lincoln, NE (US);
The Board of Regents of the University of Texas System, Austin, TX (US);
The Research Foundation for the State University of New York Stor—university AT Buffalo, Amherst, NY (US);
Andrew Marshall, Richardson, TX (US);
Peter A. Dowben, Crete, NE (US);
Jonathan P. Bird, Buffalo, NY (US);
BOARD OF REGENTS OF THE UNIVERSITY OF NEBRASKA, Lincoln, NE (US);
BOARD OF REGENTS, THE UNIVERSITY OF TEXAS SYSTEM, Austin, TX (US);
THE RESEARCH FOUNDATION FOR THE STATE UNIVERSITY OF NEW YORK, Amherst, NY (US);
Abstract
Majority and minority logic can be implemented by voltage controlled switching of magneto-electric layers of magneto electric magnetic tunnel junction (ME-MTJ) devices. A ME-MTJ device includes an exchange bias-controlled switching element and a pinned ferromagnetic layer on an antiferromagnetic layer. In one case, the switching element includes a magneto electric (ME) layer on a free ferromagnetic (FM) layer, and is separated from the pinned FM layer by an insulator. To implement a majority or minority logic gate a single ME-MTJ device may be used where the device is provided with three electrodes contacting the ME layer in an overlaying relationship with the ME layer. The orientation of the pinned FM layer indicates whether the gate is a majority or a minority logic gate.