The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 01, 2016
Filed:
Jul. 12, 2012
Takaharu Yamada, Osaka, JP;
Ryohki Itoh, Osaka, JP;
Masahiro Yoshida, Osaka, JP;
Hidetoshi Nakagawa, Osaka, JP;
Takuya Ohishi, Osaka, JP;
Masahiro Matsuda, Osaka, JP;
Kazutoshi Kida, Osaka, JP;
Takaharu Yamada, Osaka, JP;
Ryohki Itoh, Osaka, JP;
Masahiro Yoshida, Osaka, JP;
Hidetoshi Nakagawa, Osaka, JP;
Takuya Ohishi, Osaka, JP;
Masahiro Matsuda, Osaka, JP;
Kazutoshi Kida, Osaka, JP;
SHARP KABUSHIKI KAISHA, Osaka, JP;
Abstract
A method of manufacturing an array substrateaccording to the present invention includes a line forming step, and line forming step includes following performances. A plurality of source linesare formed on a glass substrate GS so as to extend from a first region Aon the glass substrate GS to a second region Athat is adjacent to the first region on an outer side thereof. A plurality of source driver side check linesA are formed on the glass substrate GS so as to extend from the second region Ato a third region that is adjacent to the first region Aon an outer side thereof and adjacent to the second region A. A plurality of first line connection portionsare formed in the second region Aand the first line connection portionsconnect the source linesand the first source driver side check linesA. A capacity stem lineand a common lineare formed to extend from the first region Ato the third region A. A second source driver side check lineB and a second line connection portionthat connects each of the capacity stem lineand the common lineand the source driver side check lineB are formed in the third region A