The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 01, 2016
Filed:
Mar. 30, 2012
Wei Xia, Irvine, CA (US);
Wei Xia, Irvine, CA (US);
BROADCOM CORPORATION, Irvine, CA (US);
Abstract
According to one exemplary implementation, an integrated circuit (IC) includes a first memory cell transistor of a read only memory (ROM) array, the first memory cell transistor including a first metal gate of a first work function and having a first threshold voltage. The IC also includes a second memory cell transistor of the ROM array, the second memory cell transistor including a second metal gate of a second work function and having a second threshold voltage. The first memory cell transistor and the second memory cell transistor can be of a first conductivity type. Furthermore, the first memory cell transistor can include a first high-k gate dielectric and the second memory cell transistor can include a second high-k gate dielectric.