The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 01, 2016
Filed:
Jun. 29, 2012
Applicants:
Chuan-cheng Cheng, Fremont, CA (US);
Runzi Chang, San Jose, CA (US);
BO Wang, Sunnyvale, CA (US);
Inventors:
Assignee:
Marvell International Ltd., Hamilton, BM;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/06 (2006.01); H01L 27/11 (2006.01);
U.S. Cl.
CPC ...
H01L 27/0629 (2013.01); H01L 27/1112 (2013.01);
Abstract
An apparatus including a resistor capacitor network that includes an integrated high resistance resistor on top of a MOS capacitor. The resistor capacitor network includes a metal oxide semiconductor capacitor portion that includes a high-k gate oxide layer. The value of k is in a range of 4.0 to 100.0. The resistor capacitor network further includes a high resistance polysilicon gate layer formed over the high-k gate oxide layer. The resistance of the polysilicon gate layer is in a range of 100 to 2000 ohms per square.