The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 01, 2016

Filed:

Nov. 24, 2014
Applicant:

SK Hynix Inc., Gyeonggi-do, KR;

Inventor:

Nam-Yeal Lee, Gyeonggi-do, KR;

Assignee:

SK Hynix Inc., Gyeonggi-do, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/78 (2006.01); H01L 23/522 (2006.01); H01L 23/532 (2006.01); H01L 23/48 (2006.01); H01L 27/108 (2006.01); H01L 21/768 (2006.01); H01L 29/45 (2006.01); H01L 29/40 (2006.01); H01L 27/115 (2006.01);
U.S. Cl.
CPC ...
H01L 23/481 (2013.01); H01L 21/7682 (2013.01); H01L 21/76897 (2013.01); H01L 23/5222 (2013.01); H01L 23/53295 (2013.01); H01L 27/10855 (2013.01); H01L 27/10885 (2013.01); H01L 29/45 (2013.01); H01L 27/11517 (2013.01); H01L 29/401 (2013.01); H01L 29/78 (2013.01); H01L 2924/0002 (2013.01);
Abstract

A semiconductor device includes a substrate having a plurality of contact surfaces, an interlayer dielectric layer formed over the substrate and having a first open portion which exposes a part of the contact surfaces and a second open portion which exposes the other contact surfaces, a storage node contact (SNC) plug filling the first open portion, and a damascene structure filing the second open portion and including a bit line, a spacer formed on both sidewalls of the bit line, a capping layer formed over the bit line and the spacer, and an air gap formed between the bit line and the spacer. The bit line includes a conductive material of which the volume is contracted by a heat treatment to form the air gap.


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