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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 9275935 B1

PDFFull Text
Date of Patent:
Mar. 01, 2016

Filed:

Aug. 07, 2013

Semiconductor device and method of manufacturing the same

Applicant:

Renesas Electronics Corporation, Kawasaki-shi, JP;

Inventors:

Ryohei Kitao, Kawasaki, JP;

Yasuaki Tsuchiya, Kawasaki, JP;

Assignee:

RENESAS ELECTRONICS CORPORATION, Kawasaki-Shi, Kanagawa, JP;

Attorney:

McGinn IP Law Group, PLLC.

Primary Examiner:

Michael Lebentritt

Assistant Examiner:

Jordan Klein

Int. Cl.
CPC ...
H01L 23/48 (2006.01); H01L 21/768 (2006.01); H01L 23/532 (2006.01); H01L 23/522 (2006.01); H01L 23/00 (2006.01); H01L 21/683 (2006.01);
U.S. Cl.
CPC ...
H01L 23/481 (2013.01); H01L 21/76898 (2013.01); H01L 23/53238 (2013.01); H01L 21/6835 (2013.01); H01L 23/522 (2013.01); H01L 24/03 (2013.01); H01L 24/05 (2013.01); H01L 24/11 (2013.01); H01L 24/13 (2013.01); H01L 24/14 (2013.01); H01L 2221/6834 (2013.01); H01L 2221/6835 (2013.01); H01L 2221/68327 (2013.01); H01L 2221/68372 (2013.01); H01L 2224/03002 (2013.01); H01L 2224/0401 (2013.01); H01L 2224/0557 (2013.01); H01L 2224/05157 (2013.01); H01L 2224/05166 (2013.01); H01L 2224/05176 (2013.01); H01L 2224/05181 (2013.01); H01L 2224/05187 (2013.01); H01L 2224/05571 (2013.01); H01L 2224/05647 (2013.01); H01L 2224/05657 (2013.01); H01L 2224/11002 (2013.01); H01L 2224/11334 (2013.01); H01L 2224/11849 (2013.01); H01L 2224/131 (2013.01); H01L 2224/13022 (2013.01); H01L 2224/13144 (2013.01); H01L 2224/13147 (2013.01); H01L 2224/13155 (2013.01); H01L 2224/14051 (2013.01); H01L 2224/14181 (2013.01); H01L 2224/14505 (2013.01); H01L 2924/00014 (2013.01);
Abstract

Technology that achieves high integration of a semiconductor device employing TSV technology is provided. A through electrode is configured by a small-diameter through electrode having a first diameter and being formed on a main surface side of a semiconductor wafer, and a large-diameter through electrode having a second diameter larger than the above-described first diameter and being formed on a back surface side of the semiconductor wafer, and the small-diameter through electrode is arranged inside the large-diameter through electrode in a planar view so that a center position of the small-diameter through electrode and a center position of the large-diameter through electrode do not overlap with each other in the planar view.

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