The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 01, 2016

Filed:

Aug. 29, 2013
Applicant:

Soraa, Inc., Fremont, CA (US);

Inventors:

Wenkan Jiang, Corona, CA (US);

Dirk Ehrentraut, Santa Barbara, CA (US);

Bradley C. Downey, Santa Barbara, CA (US);

Mark P. D'Evelyn, Santa Barbara, CA (US);

Assignee:

Soraa, Inc., Fremont, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/04 (2006.01); H01L 31/036 (2006.01); H01L 33/16 (2010.01); H01L 21/66 (2006.01);
U.S. Cl.
CPC ...
H01L 22/12 (2013.01);
Abstract

Methods for quantifying extended defects in a gallium-containing nitride crystal, wafer, or device, are disclosed. The methods include providing a gallium-containing nitride crystal, wafer, or device, processing the gallium-containing nitride crystal, wafer, or device in an etchant solution comprising one or more of HPO, HPOthat has been conditioned by prolonged heat treatment to form polyphosphoric acid, and HSO; removing the gallium-containing nitride crystal, wafer, or device from the etchant solution; and quantifying the concentration of at least one of etch pits or etch grooves.


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