The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 01, 2016
Filed:
Nov. 09, 2009
Sung-jin Whang, Gyeonggi-do, KR;
Moon-sig Joo, Gyeonggi-do, KR;
Yong-seok Eun, Gyeonggi-do, KR;
Kwon Hong, Gyeonggi-do, KR;
Bo-min Seo, Gyeonggi-do, KR;
Kyoung-eun Chang, Gyeonggi-do, KR;
Seung-woo Shin, Gyeonggi-do, KR;
Sung-Jin Whang, Gyeonggi-do, KR;
Moon-Sig Joo, Gyeonggi-do, KR;
Yong-Seok Eun, Gyeonggi-do, KR;
Kwon Hong, Gyeonggi-do, KR;
Bo-Min Seo, Gyeonggi-do, KR;
Kyoung-Eun Chang, Gyeonggi-do, KR;
Seung-Woo Shin, Gyeonggi-do, KR;
Hynix Semiconductor Inc., Gyeonggi-do, KR;
Abstract
A method for fabricating a semiconductor device, including forming gate patterns over a substrate, forming conductive layer covering top and sidewalls of each gate pattern, forming a metal layer for a silicidation process over the conductive layer, and silicifying the conductive layer and the gate patterns using the metal layer.