The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 01, 2016

Filed:

Sep. 03, 2014
Applicants:

Wookghee Hahn, Hwaseong-si, KR;

Doohyun Kim, Ansan-si, KR;

Changyeon Yu, Yongin-si, KR;

Inventors:

Wookghee Hahn, Hwaseong-si, KR;

Doohyun Kim, Ansan-si, KR;

Changyeon Yu, Yongin-si, KR;

Assignee:

Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-do, KR;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G11C 16/34 (2006.01); G11C 11/56 (2006.01); G11C 16/04 (2006.01);
U.S. Cl.
CPC ...
G11C 16/3459 (2013.01); G11C 11/5628 (2013.01); G11C 16/0483 (2013.01);
Abstract

A programming method includes a first program loop applying first and second pulses to a selected word line and thereafter determining a threshold voltage for the selected memory cell in relation to first and second verification voltages. Then, upon determining that the threshold voltage is lower than the first verification voltage, performing the second program loop by applying the first pulse to the selected word line, or upon determining that the threshold voltage is higher than the first verification voltage and lower than the second verification voltage, performing the second program loop by applying the second pulse to the selected word line.


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