The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 01, 2016

Filed:

Oct. 04, 2013
Applicant:

Western Digital (Fremont), Llc, Fremont, CA (US);

Inventors:

Jinqiu Zhang, Fremont, CA (US);

Feng Liu, San Ramon, CA (US);

Xiaoyu Yang, Union City, CA (US);

Ming Jiang, San Jose, CA (US);

Xiaotian Zhou, Fremont, CA (US);

Zeyu Ma, Dublin, CA (US);

Hai Sun, Milpitas, CA (US);

Assignee:

Western Digital (Fremont), LLC, Fremont, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11B 5/187 (2006.01); G11B 5/127 (2006.01); G11B 5/23 (2006.01); G11B 5/10 (2006.01); H01L 21/027 (2006.01); H01L 21/3213 (2006.01); G11B 5/147 (2006.01); G11B 5/31 (2006.01);
U.S. Cl.
CPC ...
G11B 5/1278 (2013.01); G11B 5/10 (2013.01); G11B 5/187 (2013.01); G11B 5/1874 (2013.01); G11B 5/232 (2013.01); G11B 5/315 (2013.01); G11B 5/3146 (2013.01); G11B 5/147 (2013.01); G11B 5/1878 (2013.01); G11B 5/313 (2013.01); G11B 5/3163 (2013.01); H01L 21/0272 (2013.01); H01L 21/32134 (2013.01); H01L 21/32139 (2013.01); Y10T 29/49032 (2015.01); Y10T 29/49041 (2015.01); Y10T 29/49043 (2015.01);
Abstract

A process for manufacturing a PMR writer main pole with non-conformal side gaps is provided. The process may include depositing a stitch layer comprising a magnetic material and a second stitch layer material over a substrate, forming an air-bearing surface (ABS) region in a first damascene material, and forming a yoke region in a second damascene material. The first damascene material may include Aluminum Oxide (Al2O3). The second damascene material may include Silicon Dioxide (SiO2). Side gap regions may include SiO2.


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