The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 01, 2016
Filed:
Jun. 25, 2008
Hongping Yuan, Fremont, CA (US);
Hai Sun, Milpitas, CA (US);
Xianzhong Zeng, Fremont, CA (US);
Winnie Yu, San Jose, CA (US);
Hongping Yuan, Fremont, CA (US);
Hai Sun, Milpitas, CA (US);
Xianzhong Zeng, Fremont, CA (US);
Winnie Yu, San Jose, CA (US);
Western Digital (Fremont), LLC, Fremont, CA (US);
Abstract
A method and system provide microelectric devices on fields on a substrate. Each field includes at least one microelectric device having a critical device feature and remaining device feature(s) distal from the critical device feature. The method and system include providing a photoresist layer for fabricating the microelectric devices and exposing the photoresist layer using a dark field mask. The dark field mask is for defining a critical mask feature corresponding to the critical device feature and exposing a first portion of the fields. The first portion includes not more than five percent of each field. The method and system further include exposing the photoresist layer using a clear field mask. The clear field mask is for defining remaining mask feature(s) corresponding to the remaining device feature(s). The clear field mask exposes a second portion of the fields that is different from the first portion.