The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 01, 2016
Filed:
Apr. 13, 2012
Jordi Veirman, Annecy le Vieux, FR;
Sebastien Dubois, Scionzier, FR;
Nicolas Enjalbert, Burlats, FR;
Jordi Veirman, Annecy le Vieux, FR;
Sebastien Dubois, Scionzier, FR;
Nicolas Enjalbert, Burlats, FR;
Abstract
A method for determining the interstitial oxygen concentration of a sample made from a p-doped semiconductor material includes a step of heat treatment of the sample in order to form thermal donors, determining the duration of the heat treatment required to obtain a compensated semiconductor material, determining the thermal donors concentration in the sample of compensated semiconductor material, from the charge carriers concentration, and determining the oxygen concentration from the thermal donors of and the duration of the heat treatment.