The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 01, 2016
Filed:
Dec. 18, 2013
Applicant:
General Electric Company, Schenectady, NY (US);
Inventors:
Chang L. Kim, Waukesha, WI (US);
David L. McDaniel, Waukesha, WI (US);
Vi-Hoa Tran, Waukesha, WI (US);
Assignee:
General Electric Company, Schenectady, NY (US);
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G01T 1/24 (2006.01); A61B 6/00 (2006.01); A61B 6/03 (2006.01); G01T 1/20 (2006.01); G01T 1/208 (2006.01);
U.S. Cl.
CPC ...
A61B 6/585 (2013.01); A61B 6/037 (2013.01); G01T 1/208 (2013.01); G01T 1/2018 (2013.01); G01T 1/248 (2013.01);
Abstract
An imaging system includes a first silicon photomultiplier (SiPM) comprising an array of microcells. Each microcell is an avalanche photodiode (APD) operated in a Geiger mode, a first area of the first SiPM, comprising at least one of the microcells, is electrically isolated from all other microcells, and a signal from the first area, resulting from at least one photon pulse, is used to determine a gain of the first SiPM.