The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 23, 2016
Filed:
Nov. 25, 2013
Applicant:
Sanyo Electric Co., Ltd., Osaka, JP;
Inventors:
Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H05K 1/03 (2006.01); H05K 1/02 (2006.01); H01L 23/14 (2006.01); H05K 3/00 (2006.01); H01L 23/498 (2006.01); H01L 23/00 (2006.01); H01L 25/065 (2006.01); H01L 25/18 (2006.01); H01L 33/64 (2010.01);
U.S. Cl.
CPC ...
H05K 1/021 (2013.01); H01L 23/142 (2013.01); H01L 23/498 (2013.01); H01L 23/49894 (2013.01); H05K 3/00 (2013.01); H01L 24/29 (2013.01); H01L 24/32 (2013.01); H01L 24/45 (2013.01); H01L 24/48 (2013.01); H01L 24/73 (2013.01); H01L 24/92 (2013.01); H01L 25/0655 (2013.01); H01L 25/18 (2013.01); H01L 33/641 (2013.01); H01L 33/642 (2013.01); H01L 2224/291 (2013.01); H01L 2224/2919 (2013.01); H01L 2224/32225 (2013.01); H01L 2224/32245 (2013.01); H01L 2224/45124 (2013.01); H01L 2224/45144 (2013.01); H01L 2224/45147 (2013.01); H01L 2224/48227 (2013.01); H01L 2224/48247 (2013.01); H01L 2224/73265 (2013.01); H01L 2224/92247 (2013.01); H01L 2924/01013 (2013.01); H01L 2924/12041 (2013.01); H01L 2924/1305 (2013.01); H01L 2924/13055 (2013.01); H01L 2924/13091 (2013.01); H01L 2924/14 (2013.01);
Abstract
A device mounting board includes a metallic substrate, an oxide film formed such that the surfaces of the metallic form are oxidized, an insulating resin layer disposed on the oxide film facing one main surface of the metallic layer, and a wiring layer disposed on the insulating resin layer. The film thickness of a certain partial region of the oxide film disposed below a first semiconductor device is greater than that of the other regions surrounding the partial region of the oxide film. Conversely, the film thickness of the insulating resin layer underneath a second semiconductor device is less than that of the insulating resin layer underneath the first semiconductor device.