The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 23, 2016
Filed:
Jun. 16, 2014
Samsung Electro-mechanics Co., Ltd., Suwon-Si, Gyeonggi-Do, KR;
Samsung Electro-Mechanics Co., Ltd., Suwon-si, KR;
Abstract
A high voltage driver may include: a low side switching unit including first to n-th N-channel metal oxide semiconductor (NMOS) transistors; a high side switching unit including first and second to n-th P-channel MOS (PMOS) transistors; a voltage dividing unit dividing a voltage between the output terminal and the ground; a first constant voltage unit providing a constant voltage and a unidirectional signal path between a source and a gate of each of the first to n-th NMOS transistors; a second constant voltage unit providing a constant voltage and a unidirectional signal path between a source and a gate of each of the first to n-th PMOS transistors; a first charging unit providing a charged voltage to each of the gates of the second to n-th NMOS transistors; and a second charging unit providing a charged voltage to each of the gates of the second to n-th PMOS transistors.