The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 23, 2016
Filed:
Sep. 03, 2013
Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-do, KR;
Jae-hyok Ko, Gyeonggi-do, KR;
Woo-seok Kim, Gyeonggi-do, KR;
Han-gu Kim, Gyeonggi-do, KR;
Sang-young Cho, Gyeonggi-do, KR;
SAMSUNG ELECTRONICS CO., LTD., Suwon-Si, Gyeonggi-Do, KR;
Abstract
A semiconductor apparatus that includes: a first high-voltage transistor having a gate and a first electrode, wherein the first electrode is connected to a first pad and a parasitic capacitance forms between the gate and the first electrode; and a clamping circuit that is connected to the gate of the first high-voltage transistor, wherein the clamping circuit detects a change in a level of a gate voltage of the first high-voltage transistor due to electrostatic discharge, and clamps the gate voltage of the first high-voltage transistor according to a result of the detection.