The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 23, 2016
Filed:
Oct. 15, 2013
Applicants:
Donghai Wang, State College, PA (US);
Ran Yi, State College, PA (US);
Fang Dai, State College, PA (US);
Inventors:
Donghai Wang, State College, PA (US);
Ran Yi, State College, PA (US);
Fang Dai, State College, PA (US);
Assignee:
THE PENN STATE RESEARCH FOUNDATION, University Park, PA (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01M 4/134 (2010.01); H01M 4/04 (2006.01); H01M 4/38 (2006.01); H01M 4/62 (2006.01); H01M 4/1395 (2010.01);
U.S. Cl.
CPC ...
H01M 4/134 (2013.01); H01M 4/0471 (2013.01); H01M 4/386 (2013.01); H01M 4/625 (2013.01); H01M 4/1395 (2013.01); Y02E 60/122 (2013.01);
Abstract
Embodiments provide a method of producing micro-sized Si—C composites or doped Si—C and Si alloy-C with interconnected nanoscle Si and C building blocks through converting commercially available SiO(0<x<2) to a silicon framework by calcination, followed by etching and then by carbon filling by thermal deposition of gas containing organic molecules that have carbon atoms.