The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 23, 2016
Filed:
Apr. 17, 2013
Applicants:
Hyunsang Hwang, Gwangju, KR;
Seonghyun Kim, Gwangju, KR;
Xinjun Liu, Gwangju, KR;
Inventors:
Assignee:
GWANGJU INSTITUTE OF SCIENCE AND TECHNOLOGY, Gwangju, KR;
Primary Examiner:
Int. Cl.
CPC ...
H01L 45/00 (2006.01); H01L 27/24 (2006.01);
U.S. Cl.
CPC ...
H01L 45/145 (2013.01); H01L 27/2463 (2013.01); H01L 45/08 (2013.01); H01L 45/1233 (2013.01); H01L 45/146 (2013.01); H01L 45/1608 (2013.01); H01L 45/1625 (2013.01); H01L 45/1641 (2013.01);
Abstract
Disclosed are a resistance change memory device, a method of fabricating the same, and a resistance change memory array including the same. The resistance change memory device includes a first electrode and a second electrode. A hybrid switching layer is interposed between the first electrode and the second electrode. The hybrid switching layer is a metal oxide layer having both threshold switching characteristics and memory switching characteristics.
Quick Actions:
Hwang, Hyunsang. (2016). Resistance change memory device having threshold switching and memory switching characteristics, method of fabricating the same, and resistance change memory device including the same (U.S. Patent No. 9269901). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/9269901
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile