The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 23, 2016

Filed:

Nov. 12, 2014
Applicant:

Fujitsu Limited, Kawasaki-shi, Kanagawa, JP;

Inventors:

John David Baniecki, Zama, JP;

Masatoshi Ishii, Kawasaki, JP;

Kazuaki Kurihara, Atsugi, JP;

Kazunori Yamanaka, Isehara, JP;

Assignee:

FUJITSU LIMITED, Kawasaki, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 35/00 (2006.01); H01L 35/32 (2006.01); H01L 35/22 (2006.01); H01L 35/02 (2006.01); H01L 35/26 (2006.01); H01L 35/12 (2006.01); H01L 35/14 (2006.01);
U.S. Cl.
CPC ...
H01L 35/325 (2013.01); H01L 35/22 (2013.01); H01L 35/32 (2013.01); H01L 35/00 (2013.01); H01L 35/02 (2013.01); H01L 35/12 (2013.01); H01L 35/14 (2013.01); H01L 35/26 (2013.01);
Abstract

A thermoelectric conversion device includes a stack in which a first perovskite dielectric film, which includes Sr and Ti and has a first bandgap, and a second perovskite dielectric film, which includes Sr and Ti and has a second bandgap smaller than the first bandgap, are stacked alternately, each of the first and second perovskite dielectric films being doped to have an electric conductivity, the first and the second perovskite dielectric films having respective compositions such that there appears a bandoffset of 0.54 eV in maximum between a conduction band of the first perovskite dielectric film and a conduction band of the second perovskite dielectric film.


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