The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 23, 2016
Filed:
Aug. 26, 2014
Kabushiki Kaisha Toshiba, Minato-ku, JP;
Mitsuhiro Kushibe, Setagaya, JP;
Kei Kaneko, Yokohama, JP;
Yasuo Ohba, Yokosuka, JP;
Hiroshi Katsuno, Komatsu, JP;
Shinji Yamada, Nonoichi, JP;
Kabushiki Kaisha Toshiba, Minato-ku, JP;
Abstract
According to one embodiment, a semiconductor light emitting element includes an n-type semiconductor layer including a nitride semiconductor, a p-type semiconductor layer including a nitride semiconductor, a light emitting unit, a first layer, a second layer, and a third layer. The light emitting unit is provided between the n-type and p-type semiconductor layers, and includes a first well layer including a nitride semiconductor. The first layer is provided between the first well layer and the p-type semiconductor layer, and includes AlGaInN having a first Mg concentration. The second layer is provided between the first layer and the p-type semiconductor layer, and includes AlGaInN having a second Mg concentration higher than the first Mg concentration. The third layer is provided between the second layer and the p-type semiconductor layer, and includes AlGaInN having a third Mg concentration higher than the first Mg concentration and lower than the second Mg concentration.