The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 23, 2016
Filed:
Jun. 12, 2014
Applicant:
Lg Innotek Co., Ltd., Seoul, KR;
Inventor:
Eun Sil Choi, Seoul, KR;
Assignee:
LG INNOTEK CO., LTD., Seoul, KR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/15 (2006.01); H01L 29/732 (2006.01); H01L 21/00 (2006.01); H01L 33/22 (2010.01); H01L 33/32 (2010.01);
U.S. Cl.
CPC ...
H01L 33/22 (2013.01); H01L 33/32 (2013.01); H01L 2933/0091 (2013.01);
Abstract
A light emitting device includes a first electrode layer, a second conductive semiconductor layer on the first electrode layer, an active layer on the second conductive semiconductor layer, and a first conductive semiconductor layer on the active layer. An AlGaN layer (where, 0y≦1) is provided over the first conductive semiconductor layer, and an InGaN pattern (where, 0x≦1) is provided over the AlGaN layer. A gallium nitride semiconductor layer is provided over the InGaN pattern; and a pad electrode is provided on the gallium nitride semiconductor layer.