The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 23, 2016
Filed:
Sep. 06, 2014
Applicant:
Hc Semitek Corporation, Wuhan, CN;
Inventors:
Assignee:
HC SEMITEK CORPORATION, Wuhan, CN;
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/00 (2006.01); H01L 33/00 (2010.01); H01L 33/14 (2010.01); H01L 33/06 (2010.01); H01L 33/04 (2010.01); H01L 33/32 (2010.01);
U.S. Cl.
CPC ...
H01L 33/0025 (2013.01); H01L 33/04 (2013.01); H01L 33/06 (2013.01); H01L 33/145 (2013.01); H01L 33/0075 (2013.01); H01L 33/32 (2013.01);
Abstract
A semiconductor light-emitting diode, including: an n-GaN layer, a quantum well layer, an electron blocking layer, and a p-GaN layer, which are sequentially stacked on a substrate. The electron blocking layer includes at least one first AlGaN layer and at least one second AlGaN layer. The first AlGaN layer and the second AlGaN layer are alternately stacked. The adjacent first and second AlGaN layers have different Al component.