The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 23, 2016

Filed:

Nov. 12, 2012
Applicant:

Newsouth Innovations Pty Limited, UNSW Sydney, NSW, AU;

Inventors:

Valantis Vais, Beverley Park, AU;

Alison Joan Lennon, Rozelle, AU;

Stuart Ross Wenham, Cronulla, AU;

Jing Jia Ji, Shanghai, CN;

Alison Maree Wenham, Cronulla, AU;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 31/0224 (2006.01); H01L 31/18 (2006.01); H01L 21/225 (2006.01); H01L 21/268 (2006.01); C25D 17/00 (2006.01); C25D 11/04 (2006.01); C25D 17/10 (2006.01); C25D 17/14 (2006.01); C25D 7/12 (2006.01);
U.S. Cl.
CPC ...
H01L 31/1884 (2013.01); C25D 7/126 (2013.01); C25D 11/045 (2013.01); C25D 17/008 (2013.01); C25D 17/10 (2013.01); C25D 17/14 (2013.01); H01L 21/2255 (2013.01); H01L 21/268 (2013.01); H01L 31/022425 (2013.01); H01L 21/2254 (2013.01); Y02E 10/50 (2013.01);
Abstract

A method of depositing metal on an exposed surface of a p-type semiconductor region of a semiconductor device comprising a p-n junction is disclosed, the method comprising: immersing the exposed surface of the p-type semiconductor region on which the metal is to be deposited in a solution of metal ions; producing an electric field in the semiconductor device such that the p-n junction is forward biased; electrochemically depositing the metal on the exposed surface of the p-type semiconductor region of the semiconductor device by reduction of metal ions in the solution.


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