The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 23, 2016

Filed:

Feb. 17, 2014
Applicant:

Wavefront Holdings, Llc, Basking Ridge, NJ (US);

Inventor:

Jie Yao, Princeton, NJ (US);

Assignee:

WAVEFRONT HOLDINGS, LLC, Basking Ridge, NJ (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G01J 1/42 (2006.01); H01L 31/11 (2006.01); G01S 17/08 (2006.01); H01L 27/146 (2006.01);
U.S. Cl.
CPC ...
H01L 31/1105 (2013.01); G01J 1/42 (2013.01); G01S 17/08 (2013.01); H01L 27/14625 (2013.01); H01L 27/14681 (2013.01); Y02E 10/50 (2013.01);
Abstract

Disclosed herein is a phototransistor (PT) comprising an emitter, a collector, a floating base, wherein the PT is configured to detect a photon flux incident on the PT and the photon flux being lower than one single photon within f, or wherein the PT is configured to detect a photon flux incident on the PT and the photon flux being below a photon shot noise of the photon flux within f, or wherein the PT is configured to detect a photon flux incident on the PT and the photon flux is 1/√{square root over (β)} of a photon shot noise of the photon flux within f, or wherein the PT is capable of detecting a photon flux incident on the PT and the photon flux being below 2f, or wherein the PT is capable of detecting a photon flux incident on the PT and the photon flux being 2f/β, wherein f is an electrical bandwidth of the PT and β is a current amplification gain of the PT.


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