The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 23, 2016

Filed:

Dec. 18, 2013
Applicant:

Samsung Electronics Co., Ltd., Suwon-si, KR;

Inventors:

Soohun Hong, Gunpo-Si, KR;

Heesoo Kang, Seoul, KR;

Dongho Cha, Seongnam-si, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/78 (2006.01); H01L 29/66 (2006.01); H01L 29/165 (2006.01);
U.S. Cl.
CPC ...
H01L 29/785 (2013.01); H01L 29/66545 (2013.01); H01L 29/7848 (2013.01); H01L 29/165 (2013.01);
Abstract

Field effect transistors are provided. An active region protrudes from a substrate and a gate electrode is provided on the active region. Source/drain regions are provided at both sides of the active region under the gate electrode, respectively. A width of a lower portion of the gate electrode is greater than a width of an upper portion of the gate electrode.


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