The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 23, 2016
Filed:
Dec. 12, 2012
Sharp Kabushiki Kaisha, Osaka-shi, Osaka, JP;
John Kevin Twynam, Osaka, JP;
SHARP KABUSHIKI KAISHA, Osaka, JP;
Abstract
A normally-off-type HFET includes: an undoped AlGaN layer of tthickness, an undoped AlGaN layer of tthickness and an undoped GaN channel layer of tthickness that are sequentially stacked; a source electrode and a drain electrode separated from each other and electrically connected to the channel layer; an undoped AlGaN layer of tthickness formed between the source electrode and the drain electrode on the channel layer; an AlGaN layer of tthickness formed in a shape of a mesa on a partial area of the AlGaN layer between the source electrode and the drain electrode; and a Schottky barrier type gate electrode formed on the AlGaN layer, in which conditions of y>x>w>z, t>t>tand 2wt/(x−w)>t>1 nm are satisfied.