The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 23, 2016
Filed:
Jan. 08, 2014
Applicant:
California Institute of Technology, Pasadena, CA (US);
Inventors:
Kaushik Sengupta, Pasadena, CA (US);
Seyed Ali Hajimiri, La Canada, CA (US);
Assignee:
California Institute of Technology, Pasadena, CA (US);
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/146 (2006.01); G01N 21/3581 (2014.01); G01J 5/08 (2006.01);
U.S. Cl.
CPC ...
H01L 27/14609 (2013.01); G01J 5/0837 (2013.01); G01N 21/3581 (2013.01); H01L 27/14649 (2013.01); H01L 27/14601 (2013.01);
Abstract
A low-power 4×4-pixel THz camera with responsivity greater than 2.5 MV/W and sub-10 pW/√Hz NEP at 0.25 THz is integrated in 130 nm silicon without using either high-resistivity substrates or silicon lenses. Imaging results with a fully integrated radiating CMOS power source demonstrate the first entirely silicon-based THz imager.