The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 23, 2016

Filed:

Dec. 01, 2014
Applicants:

Sang M. Han, Albuquerque, NM (US);

Darin Leonhardt, Albuquerque, NM (US);

Swapnadip Ghosh, Albuquerque, NM (US);

Inventors:

Sang M. Han, Albuquerque, NM (US);

Darin Leonhardt, Albuquerque, NM (US);

Swapnadip Ghosh, Albuquerque, NM (US);

Assignee:

STC.UNM, Albuquerque, NM (US);

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/764 (2006.01); H01L 21/20 (2006.01); H01L 27/12 (2006.01); H01L 29/49 (2006.01); H01L 21/02 (2006.01); H01L 21/203 (2006.01); H01L 21/762 (2006.01); H01L 29/06 (2006.01); H01L 27/02 (2006.01);
U.S. Cl.
CPC ...
H01L 27/1203 (2013.01); H01L 21/0265 (2013.01); H01L 21/02293 (2013.01); H01L 21/02455 (2013.01); H01L 21/02532 (2013.01); H01L 21/02538 (2013.01); H01L 21/02639 (2013.01); H01L 21/20 (2013.01); H01L 21/2033 (2013.01); H01L 21/764 (2013.01); H01L 21/76289 (2013.01); H01L 27/0248 (2013.01); H01L 29/0665 (2013.01); H01L 29/0673 (2013.01); H01L 29/4991 (2013.01); H01L 2221/1042 (2013.01);
Abstract

An embodiment of the present disclosure is directed to a semiconductor device. The semiconductor devise comprises a substrate. An epitaxially grown semiconductor material is disposed over at least a portion of the substrate. A nanotemplate structure is disposed at least partially within the semiconductor material. The nanotemplate structure comprises a plurality of dielectric nanoscale features defining a plurality of nanoscale windows. An air gap is disposed between at least a portion of one or more of the nanoscale features and the semiconductor material.


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