The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 23, 2016

Filed:

Dec. 18, 2012
Applicant:

SK Hynix Inc., Icheon-si Gyeonggi-do, KR;

Inventors:

Ki Hong Lee, Suwon-si, KR;

Seung Ho Pyi, Seongnam-si, KR;

Jin Ho Bin, Seoul, KR;

Assignee:

SK Hynix Inc., Gyeonggi-do, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/115 (2006.01); H01L 29/78 (2006.01); H01L 29/792 (2006.01); H01L 29/66 (2006.01); H01L 27/108 (2006.01);
U.S. Cl.
CPC ...
H01L 27/11556 (2013.01); H01L 27/10802 (2013.01); H01L 27/1157 (2013.01); H01L 27/11521 (2013.01); H01L 27/11568 (2013.01); H01L 27/11573 (2013.01); H01L 27/11578 (2013.01); H01L 27/11582 (2013.01); H01L 29/66666 (2013.01); H01L 29/7827 (2013.01); H01L 29/792 (2013.01); H01L 27/11524 (2013.01);
Abstract

A semiconductor device includes a pipe gate, word lines stacked on the pipe gate, first channel layers configured to pass through the word lines, and a second channel layer formed in the pipe gate to connect the first channel layers and having a higher impurity concentration than the first channel layers.


Find Patent Forward Citations

Loading…