The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 23, 2016
Filed:
Dec. 06, 2013
Applicant:
Nxp B.v., Eindhoven, NL;
Inventors:
Evelyne Gridelet, Omal, BE;
Hans Mertens, Leuven, BE;
Michiel Jos van Duuren, Valkenswaard, NL;
Tony Vanhoucke, Bierbeek, BE;
Viet Thanh Dinh, Heverlee, BE;
Assignee:
NXP, B.V., Eindhoven, NL;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/8238 (2006.01); H01L 27/06 (2006.01); H01L 21/8249 (2006.01); H01L 27/115 (2006.01);
U.S. Cl.
CPC ...
H01L 27/0623 (2013.01); H01L 21/8249 (2013.01); H01L 27/11546 (2013.01);
Abstract
Methods and systems for processing a silicon wafer are disclosed. A method includes providing a flash memory region in the silicon wafer and providing a bipolar transistor with a polysilicon external base in the silicon wafer. The flash memory region and the bipolar transistor are formed by depositing a single polysilicon layer common to both the flash memory region and the bipolar transistor.