The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 23, 2016
Filed:
Jan. 14, 2015
Vlt, Inc., Sunnyvale, CA (US);
Patrizio Vinciarelli, Boston, MA (US);
Sergey Luzanov, Pelham, NH (US);
VLT, INC., Sunnyvale, CA (US);
Abstract
A semiconductor device includes a semiconductor substrate with doped regions of a first type and doped regions of a second type. A first metallization layer connects to the doped regions of the first type through conductive paths, such that current is able to flow within the metallization layer along a plurality of linear axes. A second metallization layer connects to the doped regions of the second type through conductive paths, such that that current is able to flow within the metallization layer along a plurality of linear axes. Contacts on an exterior surface of the semiconductor device can be arranged concentrically.