The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 23, 2016

Filed:

Dec. 30, 2013
Applicant:

Chunghwa Picture Tubes, Ltd, Pedeh, Taoyuan, TW;

Inventors:

Chin-Tzu Kao, Changhua, TW;

Wen-Cheng Lu, Taoyuan, TW;

Assignee:

CHUNGHWA PICTURE TUBES, LTD., Padeh, Taoyuan, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/12 (2006.01); H01L 21/8254 (2006.01); H01L 21/70 (2006.01); H01L 29/786 (2006.01); H01L 29/66 (2006.01);
U.S. Cl.
CPC ...
H01L 21/8254 (2013.01); H01L 21/707 (2013.01); H01L 29/66969 (2013.01); H01L 29/7869 (2013.01); H01L 29/78606 (2013.01);
Abstract

A TFT substrate includes: a substrate; and a plurality of TFTs, wherein each of the TFTs comprises: a gate electrode, disposed on the substrate; a gate insulating layer, disposed on the substrate and covering the gate electrode; a metallic oxide active layer, disposed on the gate insulating layer; a metallic oxide protection layer, disposed on the metallic oxide active layer; an etching stop layer, disposed on the metallic oxide protection layer, wherein a first through hole and a second through hole penetrate through the etching stop layer and the metallic oxide protection layer; and a source electrode and a drain electrode, disposed in the first through hole and the second through hole respectively, and electrically connected to the metallic oxide active layer.


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