The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 23, 2016

Filed:

Aug. 10, 2015
Applicant:

Kabushiki Kaisha Toshiba, Minato-ku, JP;

Inventors:

Fumio Sasaki, Kanagawa-ken, JP;

Hisao Kawasaki, Kanagawa-ken, JP;

Assignee:

KABUSHIKI KAISHA TOSHIBA, Minato-ku, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/768 (2006.01); H01L 23/532 (2006.01); H01L 21/324 (2006.01);
U.S. Cl.
CPC ...
H01L 21/76879 (2013.01); H01L 21/324 (2013.01); H01L 21/76871 (2013.01); H01L 21/76898 (2013.01); H01L 23/53257 (2013.01);
Abstract

A semiconductor device concerning the embodiment includes a semiconductor layer which has a first surface and a second surface which is opposite to the first surface, an interlayer which is provided on the first surface and which consists of only metal whose standard oxidation-reduction potential is not lower than 0 (zero) V in an ionization tendency, and an electrode provided on the interlayer. The semiconductor device further includes an electrical conductive layer which covers an inside of a hole which is formed in the semiconductor layer so as to reach the interlayer the interlayer from the second surface, and which is electrically connected to the electrode via the interlayer which is exposed to a bottom of the hole.


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