logo

For the Inventor, By the Inventor

The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 9269577 B1

PDFFull Text
Date of Patent:
Feb. 23, 2016

Filed:

Oct. 24, 2013

Method for manufacturing nitride semiconductor device

Applicant:

Furukawa Electric Co., Ltd., Tokyo, JP;

Inventor:

Masayuki Iwami, Tokyo, JP;

Assignee:

FURUKAWA ELECTRIC CO., LTD., Tokyo, JP;

Attorney:

Oblon, McClelland, Maier & Neustadt, L.L.P.

Primary Examiner:

Matthew Landau

Assistant Examiner:

Igwe U Anya

Int. Cl.
CPC ...
H01L 21/20 (2006.01); H01L 21/36 (2006.01); H01L 21/02 (2006.01); H01L 29/66 (2006.01); H01L 29/778 (2006.01); H01L 29/861 (2006.01); H01L 29/207 (2006.01); H01L 33/00 (2010.01); H01L 29/20 (2006.01);
U.S. Cl.
CPC ...
H01L 21/02664 (2013.01); H01L 21/0242 (2013.01); H01L 21/0254 (2013.01); H01L 21/0262 (2013.01); H01L 21/02381 (2013.01); H01L 21/02389 (2013.01); H01L 21/02458 (2013.01); H01L 21/02576 (2013.01); H01L 21/02579 (2013.01); H01L 21/02581 (2013.01); H01L 29/207 (2013.01); H01L 29/66204 (2013.01); H01L 29/66462 (2013.01); H01L 29/7787 (2013.01); H01L 29/861 (2013.01); H01L 33/007 (2013.01); H01L 29/2003 (2013.01);
Abstract

Forming a group III nitride semiconductor layer having p-type conductivity on at least one layer or more formed on an Si substrate or sapphire substrate using at least one of an epitaxial growth or ion implantation method. When forming the group III nitride semiconductor layer, at least one type of metal element selected from Zn, Li, Au, Ag, Cu, Pt, and Pd having a formation energy of a group III element substitute higher than that of Mg is doped simultaneously with Mg of a p-type dopant to introduce an interstitial site. Subsequent to activation of Mg as an acceptor, the metal element is removed from the group III nitride semiconductor layer, and the concentration of the metal element is not more than 1/100 of the concentration of Mg to realize a hole concentration of not less than 10to 10cm.

Find Patent Forward Citations

Loading…