The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 23, 2016
Filed:
Mar. 26, 2014
Applicant:
Sumitomo Electric Industries, Ltd., Osaka-shi, JP;
Inventor:
Jun Genba, Itami, JP;
Assignee:
Sumitomo Electric Industries, Ltd., Osaka-shi, JP;
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/02 (2006.01); C30B 29/36 (2006.01); C30B 25/16 (2006.01); C30B 25/18 (2006.01); C30B 25/20 (2006.01);
U.S. Cl.
CPC ...
H01L 21/02529 (2013.01); C30B 25/165 (2013.01); C30B 25/186 (2013.01); C30B 25/20 (2013.01); C30B 29/36 (2013.01); H01L 21/0262 (2013.01); H01L 21/02378 (2013.01); H01L 21/02576 (2013.01); H01L 21/02658 (2013.01);
Abstract
A method for manufacturing a silicon carbide semiconductor substrate is provided to offer a silicon carbide semiconductor substrate having a highly flat surface at low cost. The method includes: a step of preparing a silicon carbide substrate as a seed substrate; a step of performing vapor phase etching onto a main surface of the silicon carbide substrate; and a step of epitaxially growing silicon carbide on the main surface. A carbon-atom containing gas is supplied to silicon carbide substrate from a point of time in the step of performing the vapor phase etching.