The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 23, 2016
Filed:
Apr. 11, 2012
Sang M. Han, Albuquerque, NM (US);
Darin Leonhardt, Albuquerque, NM (US);
Sang M. Han, Albuquerque, NM (US);
Darin Leonhardt, Albuquerque, NM (US);
STC.UNM, Albuquerque, NM (US);
Abstract
Lattice-mismatched semiconductor devices having a substrate, a first epitaxial film disposed thereon, a dielectric material, and a second epitaxial film. The first epitaxial film contains etch pits that extend from the outer surface of the first epitaxial film into the first epitaxial film. The dielectric material is disposed within the etch pits and blocks at least some of the threading dislocations in the first epitaxial film from propagating into the second epitaxial film. Semiconductor devices containing a silicon (Si) substrate or a silicon germanium (SiGe) substrate, a germanium (Ge) film disposed over the substrate, and a dielectric material. Methods for producing such semiconductor devices.