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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 9269568 B1

PDFFull Text
Date of Patent:
Feb. 23, 2016

Filed:

Jul. 03, 2014

Method of manufacturing semiconductor device using the same

Applicant:

Wonik Ips Co., Ltd., Pyeongtaek-Si, Gyeonggi-Do, KR;

Inventors:

Young Soo Kwon, Hwaseong-Si, KR;

Kyoung Pil Na, Incheon, KR;

Seok Jong Hyun, Daejeon, KR;

Assignee:

WONIK IPS CO., LTD, , KR;

Attorney:
Primary Examiner:

Tony Tran

Int. Cl.
CPC ...
H01L 21/02 (2006.01); C23C 16/30 (2006.01); C23C 16/452 (2006.01); C23C 16/50 (2006.01); H01J 37/32 (2006.01); H01L 21/314 (2006.01); H01L 21/316 (2006.01); H01L 21/318 (2006.01); H01L 21/768 (2006.01);
U.S. Cl.
CPC ...
H01L 21/02274 (2013.01); C23C 16/30 (2013.01); C23C 16/308 (2013.01); C23C 16/452 (2013.01); C23C 16/50 (2013.01); H01J 37/321 (2013.01); H01J 37/32357 (2013.01); H01J 37/32449 (2013.01); H01L 21/022 (2013.01); H01L 21/0214 (2013.01); H01L 21/0217 (2013.01); H01L 21/02126 (2013.01); H01L 21/3145 (2013.01); H01L 21/3185 (2013.01); H01L 21/31633 (2013.01); H01L 21/76832 (2013.01); H01L 21/76834 (2013.01);
Abstract

Provided are a deposition apparatus and a method of manufacturing a semiconductor device. In the method, a reaction chamber provided with a gaseous source supply unit and a liquid source supply unit is prepared, and an etch stop layer is formed on a substrate by using a gaseous source. Then, an interlayer insulation layer is formed on the etch stop layer by using a vaporized liquid source and a vaporized dopant source. In this way, the etch stop layer and the interlayer insulation layer are formed in-situ in the same reaction chamber.

Find Patent Forward Citations

Kwon, Young. (2016). Method of manufacturing semiconductor device using the same (U.S. Patent No. 9269568). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/9269568

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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