The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 23, 2016
Filed:
Jul. 03, 2014
Applicant:
Wonik Ips Co., Ltd., Pyeongtaek-Si, Gyeonggi-Do, KR;
Inventors:
Assignee:
WONIK IPS CO., LTD, , KR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/02 (2006.01); C23C 16/30 (2006.01); C23C 16/452 (2006.01); C23C 16/50 (2006.01); H01J 37/32 (2006.01); H01L 21/314 (2006.01); H01L 21/316 (2006.01); H01L 21/318 (2006.01); H01L 21/768 (2006.01);
U.S. Cl.
CPC ...
H01L 21/02274 (2013.01); C23C 16/30 (2013.01); C23C 16/308 (2013.01); C23C 16/452 (2013.01); C23C 16/50 (2013.01); H01J 37/321 (2013.01); H01J 37/32357 (2013.01); H01J 37/32449 (2013.01); H01L 21/022 (2013.01); H01L 21/0214 (2013.01); H01L 21/0217 (2013.01); H01L 21/02126 (2013.01); H01L 21/3145 (2013.01); H01L 21/3185 (2013.01); H01L 21/31633 (2013.01); H01L 21/76832 (2013.01); H01L 21/76834 (2013.01);
Abstract
Provided are a deposition apparatus and a method of manufacturing a semiconductor device. In the method, a reaction chamber provided with a gaseous source supply unit and a liquid source supply unit is prepared, and an etch stop layer is formed on a substrate by using a gaseous source. Then, an interlayer insulation layer is formed on the etch stop layer by using a vaporized liquid source and a vaporized dopant source. In this way, the etch stop layer and the interlayer insulation layer are formed in-situ in the same reaction chamber.