The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 23, 2016

Filed:

Jun. 05, 2015
Applicants:

Anirudha V. Sumant, Argonne, IL (US);

Orlando H. Auciello, Lemont, IL (US);

Derrick C. Mancini, Argonne, IL (US);

Inventors:

Anirudha V. Sumant, Argonne, IL (US);

Orlando H. Auciello, Lemont, IL (US);

Derrick C. Mancini, Argonne, IL (US);

Assignee:

UChicago Argonne, LLC, Argonne, IL (US);

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/84 (2006.01); H01H 59/00 (2006.01); H01L 27/20 (2006.01); H03K 17/975 (2006.01);
U.S. Cl.
CPC ...
H01H 59/0009 (2013.01); H01L 27/20 (2013.01); H01H 2059/0081 (2013.01); H01H 2209/014 (2013.01); H01H 2209/046 (2013.01); H01H 2209/07 (2013.01); H01H 2239/004 (2013.01); H01H 2239/006 (2013.01); H03K 17/975 (2013.01);
Abstract

An efficient deposition process is provided for fabricating reliable RF MEMS capacitive switches with multilayer ultrananocrystalline (UNCD) films for more rapid recovery, charging and discharging that is effective for more than a billion cycles of operation. Significantly, the deposition process is compatible for integration with CMOS electronics and thereby can provide monolithically integrated RF MEMS capacitive switches for use with CMOS electronic devices, such as for insertion into phase array antennas for radars and other RF communication systems.


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