The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 23, 2016
Filed:
Mar. 15, 2013
Applicant:
SK Hynix Inc., Gyeonggi-do, KR;
Inventor:
Young-Hoon Cho, Gyeonggi-do, KR;
Assignee:
SK Hynix Inc., Gyeonggi-do, KR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 5/14 (2006.01); G11C 7/12 (2006.01); G11C 11/408 (2006.01); G11C 11/4094 (2006.01);
U.S. Cl.
CPC ...
G11C 7/12 (2013.01); G11C 11/4085 (2013.01); G11C 11/4094 (2013.01);
Abstract
Semiconductor device capable of preventing off-leakage of the transistor may include a pulse voltage generator configured to generate a pulse voltage, and a transistor configured to have a gate provided with the pulse voltage. The transistor is in an off state in response to the pulse voltage.
Quick Actions:
Cho, Young-Hoon. (2016). Semiconductor device having transistor and semiconductor memory device using the same (U.S. Patent No. 9269413). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/9269413
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile