The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 23, 2016
Filed:
Mar. 13, 2014
Applicant:
Nxp B.v., Eindhoven, NL;
Inventors:
Philip Rutter, Stockport, GB;
Maarten Swanenberg, Berg en Dal, NL;
Assignee:
NXP B.V., Eindhoven, NL;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G05F 1/70 (2006.01); H03K 17/0814 (2006.01); H03K 17/567 (2006.01); H01L 27/06 (2006.01); H01L 27/088 (2006.01); H03K 17/687 (2006.01);
U.S. Cl.
CPC ...
G05F 1/70 (2013.01); H01L 27/0629 (2013.01); H03K 17/08148 (2013.01); H03K 17/567 (2013.01); H01L 27/0605 (2013.01); H01L 27/0883 (2013.01); H03K 2017/6875 (2013.01);
Abstract
A semiconductor device, comprising first and second field effect transistors arranged in a cascode configuration: wherein the first field effect transistor is a depletion mode transistor; and wherein the second field effect transistor comprises a first source to gate capacitance and a second additional source to gate capacitance connected in parallel to the first source to gate capacitance. A power factor correction (PFC) circuit comprising the semiconductor device. A power supply comprising the PFC circuit.