The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 23, 2016

Filed:

Dec. 13, 2013
Applicant:

Tsinghua University, Beijing, CN;

Inventors:

Xiaohui Wang, Beijing, CN;

Zhibin Tian, Beijing, CN;

Tian Wang, Beijing, CN;

Longtu Li, Beijing, CN;

Assignee:

Tsinghua University, Beijing, CN;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C03B 29/00 (2006.01); C04B 35/00 (2006.01); C04B 35/46 (2006.01); C04B 37/00 (2006.01); B32B 18/00 (2006.01); C04B 35/626 (2006.01); C04B 35/628 (2006.01); B82Y 30/00 (2011.01); C01G 23/00 (2006.01); C04B 35/624 (2006.01); C04B 35/632 (2006.01); C04B 35/638 (2006.01); H01G 4/30 (2006.01); C04B 35/462 (2006.01); H01G 4/33 (2006.01); H01G 4/12 (2006.01); C04B 35/468 (2006.01);
U.S. Cl.
CPC ...
C04B 35/46 (2013.01); B32B 18/00 (2013.01); B82Y 30/00 (2013.01); C01G 23/006 (2013.01); C04B 35/462 (2013.01); C04B 35/4682 (2013.01); C04B 35/624 (2013.01); C04B 35/628 (2013.01); C04B 35/6261 (2013.01); C04B 35/6281 (2013.01); C04B 35/62625 (2013.01); C04B 35/62635 (2013.01); C04B 35/62805 (2013.01); C04B 35/62807 (2013.01); C04B 35/62815 (2013.01); C04B 35/62886 (2013.01); C04B 35/62897 (2013.01); C04B 35/632 (2013.01); C04B 35/638 (2013.01); C04B 37/001 (2013.01); C04B 37/006 (2013.01); H01G 4/1227 (2013.01); H01G 4/30 (2013.01); C01P 2002/52 (2013.01); C01P 2004/04 (2013.01); C01P 2004/62 (2013.01); C01P 2004/64 (2013.01); C01P 2006/32 (2013.01); C01P 2006/40 (2013.01); C04B 35/468 (2013.01); C04B 2235/3206 (2013.01); C04B 2235/3208 (2013.01); C04B 2235/3225 (2013.01); C04B 2235/3229 (2013.01); C04B 2235/3236 (2013.01); C04B 2235/3262 (2013.01); C04B 2235/3418 (2013.01); C04B 2235/441 (2013.01); C04B 2235/443 (2013.01); C04B 2235/449 (2013.01); C04B 2235/5445 (2013.01); C04B 2235/5454 (2013.01); C04B 2235/6025 (2013.01); C04B 2235/656 (2013.01); C04B 2235/6567 (2013.01); C04B 2235/6582 (2013.01); C04B 2235/6584 (2013.01); C04B 2235/663 (2013.01); C04B 2235/785 (2013.01); C04B 2237/346 (2013.01); H01G 4/1218 (2013.01); H01G 4/33 (2013.01);
Abstract

The present invention provides a nano complex oxide doped dielectric ceramic material used for a multilayer ceramic capacitor using a base metal as a material of internal electrodes. The doped dielectric ceramic material comprises barium titanate and a nano complex oxide dopant, wherein the molar ratio of the barium titanate to the nano complex oxide dopant is in the range of (90 to 98):(2 to 10), the average particle size of the barium titanate is 50 to 300 nm and the nano complex oxide dopant has the following formula (1): wA+xB+yC+zD. The present invention also provides processes for preparing the nano complex oxide doped dielectric ceramic material and ultrafine-grained and temperature-stable multilayer ceramic capacitors using the nano complex oxide doped dielectric ceramic material as a material of dielectric layers.


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