The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 16, 2016
Filed:
Aug. 12, 2013
Applicant:
Texas Instruments Incorporated, Dallas, TX (US);
Inventors:
Zheng Li, San Jose, CA (US);
Wai Cheong Chan, Sunnyvale, CA (US);
Assignee:
Texas Instruments Incorporated, Dallas, TX (US);
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
G01R 31/02 (2006.01); H02M 3/158 (2006.01); G01R 19/00 (2006.01); H02M 1/38 (2007.01);
U.S. Cl.
CPC ...
H02M 3/1588 (2013.01); G01R 19/0092 (2013.01); H02M 1/38 (2013.01);
Abstract
A circuit for sensing gate voltage of a power FET. A switching circuit includes a switching FET having a high voltage rating, its drain coupled to the gate of the power FET, and its source coupled to an output node. A first feedback loop is coupled to the gate of the switching FET to facilitate sensing rising gate voltage. A second feedback loop is coupled to the gate of the switching FET to facilitate sensing falling gate voltage.