The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 16, 2016
Filed:
May. 17, 2010
Applicant:
Hans-günter Eckel, Rostock, DE;
Inventor:
Hans-Günter Eckel, Rostock, DE;
Assignee:
SIEMENS AKTIENGESELLSCHAFT, München, DE;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H02M 1/08 (2006.01); H02M 1/16 (2006.01); H02M 7/5387 (2007.01); H02M 1/00 (2007.01); H03K 17/66 (2006.01);
U.S. Cl.
CPC ...
H02M 1/08 (2013.01); H02M 1/16 (2013.01); H02M 7/5387 (2013.01); H02M 2001/0009 (2013.01); H03K 17/665 (2013.01); H03K 2217/0027 (2013.01); H03K 2217/0036 (2013.01);
Abstract
The invention relates to a method for commutating from a reverse-conducting IGBT (T) operated in the diode mode to a reverse-conducting IGBT (T) operated in the IGBT mode. According to the invention the reverse-conducting IGBT (T) operated in the diode mode is turned off only at the instant a current starts to flow in the reverse-conducting IGBT (T) operated in the IGBT mode. Accordingly said commutation method is event-driven, as a result of which it is less sensitive to poorly toleranced operating times.