The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 16, 2016

Filed:

Dec. 30, 2014
Applicant:

Api Technologies Corp., Los Angeles, CA (US);

Inventor:

Ian Kellogg, State College, PA (US);

Assignee:

API Technologies Corp., Los Angeles, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H02H 5/04 (2006.01); H02H 3/08 (2006.01); H02H 3/04 (2006.01); H05K 7/20 (2006.01); G01K 7/02 (2006.01); G01K 7/16 (2006.01); G01K 7/22 (2006.01); G01R 19/165 (2006.01); H02J 7/00 (2006.01);
U.S. Cl.
CPC ...
H02H 3/085 (2013.01); G01K 7/02 (2013.01); G01K 7/16 (2013.01); G01K 7/22 (2013.01); G01R 19/16528 (2013.01); H02H 3/04 (2013.01); H05K 7/209 (2013.01); H02H 5/04 (2013.01); H02H 5/042 (2013.01); H02J 2007/0039 (2013.01);
Abstract

Systems, methods and media for current monitoring are provided herein. An exemplary method may include: receiving a temperature of a power MOSFET, the temperature being sensed by a temperature sensor; determining a resistance of the power MOSFET using the received temperature; receiving a voltage across the power MOSFET, the voltage being measured by a differential amplifier; calculating a current provided to an electrical load by the power MOSFET using the determined resistance of the power MOSFET and the received voltage; comparing the calculated current to a predetermined threshold; and switching the power MOSFET to an off state in response to the calculated current exceeding the predetermined threshold.


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