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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 9263668 B1

PDFFull Text
Date of Patent:
Feb. 16, 2016

Filed:

Aug. 13, 2014

Method for manufacturing a magnetic tunnel junction device

Applicant:

Korea Institute of Science and Technology, Seoul, KR;

Inventors:

Gyung-Min Choi, Seoul, KR;

Byoung Chul Min, Gwangmyeong-si, KR;

Kyung Ho Shin, Seoul, KR;

Assignee:

KOREA INSTITUTE OF SCIENCE AND TECHNOLOGY, Seoul, KR;

Attorney:

Lex IP Meister, PLLC

Primary Examiner:

Kevin Bernatz

Int. Cl.
CPC ...
G01R 33/09 (2006.01); G11C 11/15 (2006.01); H01F 10/32 (2006.01); H01F 41/22 (2006.01); H01L 43/12 (2006.01); H01F 10/14 (2006.01); B82Y 25/00 (2011.01); B82Y 40/00 (2011.01); H01F 41/30 (2006.01); H01L 43/10 (2006.01); H01F 10/12 (2006.01);
U.S. Cl.
CPC ...
H01L 43/12 (2013.01); B82Y 25/00 (2013.01); B82Y 40/00 (2013.01); G01R 33/091 (2013.01); G11C 11/15 (2013.01); H01F 10/14 (2013.01); H01F 10/3254 (2013.01); H01F 10/3286 (2013.01); H01F 41/307 (2013.01); H01L 43/10 (2013.01); G01R 33/098 (2013.01); H01F 10/123 (2013.01); Y10T 428/115 (2015.01);
Abstract

The present invention relates to a magnetic tunnel junction device and a manufacturing method thereof. The magnetic tunnel junction device includes: i) a first magnetic layer including a compound having a chemical formula of (AB)C; ii) an insulating layer deposited on the first magnetic layer; and iii) a second magnetic layer deposited on the insulating layer and including a compound having a chemical formula of (AB)C. The first and second magnetic layers have perpendicular magnetic anisotropy, A and B are respectively metal elements, and C is at least one amorphizing element selected from a group consisting of boron (B), carbon (C), tantalum (Ta), and hafnium (Hf).

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