The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 16, 2016
Filed:
Sep. 30, 2011
Tatsunori Toyota, Tokyo, JP;
Tomohiko Shibata, Tokyo, JP;
Tatsunori Toyota, Tokyo, JP;
Tomohiko Shibata, Tokyo, JP;
DOWA ELECTRONICS MATERIALS CO., LTD., Tokyo, JP;
Abstract
A III nitride semiconductor light emitting device with improved light emission efficiency achieved without significantly increasing forward voltage by achieving both good ohmic contact between an electrode and a semiconductor layer, and sufficient functionality of a reflective electrode layer, and a method for manufacturing the same. The III nitride semiconductor light emitting device has a III nitride semiconductor laminate including an n-type semiconductor layer, a light emitting layer, and a p-type semiconductor layer; an n-side electrode, a p-side electrode; and a composite layer having a reflective electrode portion and a contact portion made of AlGaN (0≦x≦0.05) on a second surface of the III nitride semiconductor laminate. The second surface is opposite to a first surface on the light extraction side.